The FA 2000
Reactive Ion Etch system
Unique Specifications
- Quad input manifold provides uniform conductance of process gases and high etch uniformity on wafers
- Operation within a wide pressure band enables fast isotropic etching at higher temperatures and exceptionally clean anisotropic etching at lower temperatures
- Operation within a temperature range from 0 - 125°C enhances etch rates and selectivity
- C.P, endpoint detection and other advanced options
Failure Analysis for Semiconductors
- Passivation removal - Isotropic polyimide removal, anisotropic or isotropic silicon nitride removal
- Removal of interlayer dielectrics - packages and 150 mm or 200 mm wafers accommodated
- Unsurpassed tabletop performance in single wafer cleaning, stripping, etching or reverse sputtering
Decapsulation
- Industry leader and I.P. forerunner
- First and only qualified system to interface with patented laser decapsulation technology
- Etch rates for many compounds more than 1 mil per hour
- Fastest removal of epoxy and plastic molding materials
- Uses unique Fillerblast® technology
Other Applications
- Research and development
- Manufacture of wafer probe cards
- Patterning and trenching in various materials
- Material sciences
