RIE is a dry process using chemically reactive plasma to remove material from wafers or boards. The plasma produces high energy ions which attack the wafer surface and react with the deposited material. With the correct selection of gases removal of differing materials can be realized. Additionally, the depth of etching can be controlled using endpoint detection systems.
This process is used throughout the semiconductor and microfabrication markets.
Applications
- Research and Development
- Failure Analysis
- Package Level Failure Analysis
- Passivation Removal
- Anisotropic Silicon Nitride Removal
- Functional Delayerin
FA 2000
Reactive Ion Etch system
Unique Specifications
- Quad input manifold provides uniform conductance of process gases and high etch uniformity on wafers
- Operation within a wide pressure band enables fast isotropic etching at higher temperatures and exceptionally clean anisotropic etching at lower temperatures
- Operation within a temperature range from 0 - 125°C enhances etch rates and selectivity
- I.C.P, endpoint detection and other advanced options
Failure Analysis for Semiconductors
- Passivation removal - Isotropic polyimide removal, anisotropic or isotropic silicon nitride removal
- Removal of interlayer dielectrics - packages and 150 mm or 200 mm wafers accommodated
- Unsurpassed tabletop performance in single wafer cleaning, stripping, etching or reverse sputtering
Other Applications
- Research and development
- Manufacture of wafer probe cards
- Patterning and trenching in various materials
- Material sciences